Title:
PHOTOVOLTAIC DEVICE
Document Type and Number:
Japanese Patent JPS6273784
Kind Code:
A
Abstract:
PURPOSE:To raise a yield efficiency in a short wavelength range by providing a periodic structure in a manner that a plurality of amorphous thin film are periodically laminated in a window layer. CONSTITUTION:Approx. 50Angstrom or lower of thickness, several tens Angstrom or less of forbidden band width and different conductivity type amorphous thin films 3a, 3b, 3a, 3b... are alternately approx. 1,000Angstrom or less of total thickness, or alternately periodically laminated to become several 100Angstrom or lower as a window layer 3 of periodic structure. A plurality of amorphous thin film 3a, 3b, 3a, 3b... which form the adaptive layer 3 are totally P-type conductive type by alternately laminating P-type and intrinsic type in such a manner that the one conductive type amorphous thin film 3a or 3b of them has larger optical forbidden band width Epot than the other conductivity type thin amorphous film 3b or 3a and the intrinsic layer 4. The material which has large band width Epot generally uses electively an amorphous silicon carbide, amorphous silicon nitride, amorphous silicon oxide.
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Inventors:
NAKAJIMA YUKIO
HAKU HISAO
WATANABE KANEO
MATSUOKA TSUGUFUMI
HAKU HISAO
WATANABE KANEO
MATSUOKA TSUGUFUMI
Application Number:
JP21526285A
Publication Date:
April 04, 1987
Filing Date:
September 27, 1985
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L31/04; H01L31/06; H01L31/075; H01L31/18; H01L31/20; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS60100424A | 1985-06-04 | |||
| JPS6233479A | 1987-02-13 |
Attorney, Agent or Firm:
Koji Yasutomi (1 person outside)