Title:
PHOTOVOLTAIC ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3679598
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To generate superior photoelectric conversion characteristics without preventing the movement of carriers due to inverse junction, by providing inverse conduction-type semiconductor layers on both the main surfaces of a substrate, and providing rectifying junction on the entire surface of the substrate including a side surface.
SOLUTION: A second semiconductor layer 7 is formed on one main surface of an n-type substrate 1. Then, a first semiconductor layer 3 is formed on the other. In this case, n/p/n rectifying junction where the second and first semiconductor layers 7 and 3 are successively laminated on the substrate 1 is formed at a peripheral end part on one main surface that becomes a light incidence side as in A. An n/n/p rectifying junction is formed also at a peripheral end part on the other main surface that becomes a light transmission side as in B. When the first semiconductor layer 3 is formed on one main surface of the n-type substrate 1, and then the second semiconductor layer 7 is formed on the other, the inverse junction of n/p/n where the second and first semiconductor layers 7 and 3 are successively laminated is formed on the substrate 1 at the periphery end part on one main surface of the light incidence side as in A, and the inverse junction of n/p/n is formed at the periphery end part on the other of the light transmission side as in B.
Inventors:
Toshio Asami
Application Number:
JP5344798A
Publication Date:
August 03, 2005
Filing Date:
March 05, 1998
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L31/04; (IPC1-7): H01L31/04
Domestic Patent References:
| JP9129904A | ||||
| JP4298081A | ||||
| JP7106611A | ||||
| JP9153632A |
Attorney, Agent or Firm:
Masamasa Shibano