Title:
PHYSICAL QUANTITYYELECTRICITY CONVERTER AND PRODUCTION OF THE SAME
Document Type and Number:
Japanese Patent JPS5455182
Kind Code:
A
Abstract:
PURPOSE:To reduce the thickness of insulation layer and enhance conversion efficiency by forming the insulation layer to be interposed between a metal strain inducer and a semiconductor strain gauge to be provided thereon at low temperature through sputtering, etc. CONSTITUTION:An insulation layer 42 such as of SiO2, SiO or other larger than the size of the semiconductor strain gauge 41 to be provided thereon is formed on a metal strain inducer 44 by sputtering, vapor deposition, plating, CVD, eftc. at the temperature at which the strain inducer 44 does not reach annealing temperature. Next, a bonding agent 43 composed of Au-Si or Au-Ge eutectic alloy of the same size as the gate 41 is deposited thereon and the gauge 41 is placed thereon, after which these are bonded through heat treatment while the temperature and atmosphere are made constant. Then, the thickness of the insulation layer 42 may be made as thin as 1 to 2mum and therefore the spacing between the strain inducer 44 and gauge 41 becomes smaller and the converter of good characteristics may be obtained.
Inventors:
AI MITSUO
YOSHIDA TOMOMASA
NEMOTO HIDEYUKI
YOSHIDA TOMOMASA
NEMOTO HIDEYUKI
Application Number:
JP12199677A
Publication Date:
May 02, 1979
Filing Date:
October 12, 1977
Export Citation:
Assignee:
HITACHI LTD
International Classes:
G01B7/16; H01L29/84; H01L45/00; (IPC1-7): G01B7/18; H01L45/00