Title:
PLASMA ETCHING DEVICE
Document Type and Number:
Japanese Patent JP2016103658
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a plasma etching device which can reduce an exhaust amount of greenhouse gas without worsening etching work characteristics in a plasma etching process arranged so as to perform an etching step and a protection film formation step alternately and repeatedly.SOLUTION: A plasma etching device 10 is adopted, which comprises: a chamber 11 which contains a susceptor 12 to put a silicon on; an etching gas-supply source 14 serving to supply, as an etching gas, gas including SFthrough an etching gas supply line 17 into the chamber 11; a plasma generating unit 13 disposed around the chamber 11; and a deposit gas-supply source 15 for supplying 2,3,3,3-tetrafluoropropene through a deposit gas-supply line 18 into the chamber 11.SELECTED DRAWING: Figure 1
Inventors:
YAMAMOTO TAKASHI
IKEMOTO NAOYA
ISAKI RYUICHIRO
TAKA HIROSHI
IKEMOTO NAOYA
ISAKI RYUICHIRO
TAKA HIROSHI
Application Number:
JP2016024056A
Publication Date:
June 02, 2016
Filing Date:
February 10, 2016
Export Citation:
Assignee:
SPP TECH CO LTD
TAIYO NIPPON SANSO CORP
TAIYO NIPPON SANSO CORP
International Classes:
H01L21/3065; B81C1/00
Domestic Patent References:
| JP2007035929A | 2007-02-08 | |||
| JP2012114402A | 2012-06-14 | |||
| JP2011086782A | 2011-04-28 | |||
| JP2006503425A | 2006-01-26 | |||
| JP2001517868A | 2001-10-09 | |||
| JP2011124239A | 2011-06-23 | |||
| JP2005530345A | 2005-10-06 |
Attorney, Agent or Firm:
Masatake Shiga
Suzuki Mitsuyoshi
Shunsuke Fushimi
Suzuki Mitsuyoshi
Shunsuke Fushimi