Title:
PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING METHOD
Document Type and Number:
Japanese Patent JP2023083107
Kind Code:
A
Abstract:
To suppress particles generated from a substrate mask part.SOLUTION: A plasma processing apparatus 1 has: a chamber 2; an electrode part 5 arranged at an upper part of the chamber to form a reaction chamber 2a; a high-frequency power supply 9 connected with the electrode part and that applies a high-frequency voltage to form a plasma; a substrate heater part 15 arranged at a lower part of the chamber so as to be opposed to the electrode part, being able to go up and down while mounting a substrate 10; a lifting and driving part 16A that lifts and drives the substrate heater part; a substrate mask part 31 that covers outer peripheral parts of the substrate and the substrate heater part from the electrode part; a mask supporting part 33 that is provided to the circumference of the chamber so as to support the substrate mask part when the substrate heater part goes down; a mask heating part 40 for heating the substrate mask part; and a control part 30 that controls the mask heating part. When the substrate heater part goes down, and the substrate mask part supported by the mask supporting part is separated from the substrate heater part, the mask heating part can heat the substrate mask part.SELECTED DRAWING: Figure 1
Inventors:
KIKUCHI TORU
OTA ATSUSHI
OTAKE FUMITO
OTA ATSUSHI
OTAKE FUMITO
Application Number:
JP2021197273A
Publication Date:
June 15, 2023
Filing Date:
December 03, 2021
Export Citation:
Assignee:
ULVAC CORP
International Classes:
H01L21/205; C23C16/44; H01L21/683
Attorney, Agent or Firm:
Shu Oikawa
Tomoo Katsumata
Tomoo Katsumata