Title:
PLASMA PROCESSING DEVICE AND ETCHING METHOD
Document Type and Number:
Japanese Patent JP2023046283
Kind Code:
A
Abstract:
To appropriately control the incident angle of ions in plasma to an edge region of a substrate in plasma processing.SOLUTION: A plasma processing device comprises: a substrate support including a lower electrode, a substrate supporting surface for supporting a substrate and an edge ring disposed to enclose the substrate; an upper electrode disposed above the lower electrode; a power source unit including a source power supply configured to supply source power to the upper electrode or the lower electrode and at least one bias power supply configured to supply one or two or more levels of bias power different in frequency to the lower electrode; at least one variable passive element electrically connected to the edge ring; and at least one bypass circuit configured to electrically connect the power source unit with the edge ring and supply a part of at least one level of power selected from the group consisting of the source power and at least one level of bias power to the edge ring.SELECTED DRAWING: Figure 2A
Inventors:
TORII NATSUMI
Application Number:
JP2022141352A
Publication Date:
April 03, 2023
Filing Date:
September 06, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/3065; H05H1/46
Attorney, Agent or Firm:
Kanemoto Tetsuo
Koji Hagiwara
Naoki Ogita
Takashi Saito
Takuya Mine
Koji Hagiwara
Naoki Ogita
Takashi Saito
Takuya Mine
Previous Patent: Candida inhibitory composition
Next Patent: Adhesive sheets, laminates, and devices that transmit or receive electromagnetic waves
Next Patent: Adhesive sheets, laminates, and devices that transmit or receive electromagnetic waves