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Title:
PLASMA PROCESSING DEVICE, INSPECTION METHOD USING PLASMA PROCESSING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING PLASMA PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP2020187948
Kind Code:
A
Abstract:
To detect a minute change in a state of plasma.SOLUTION: A plasma processing apparatus PTD1 includes: a chamber 10; and an electrostatic chuck provided inside the chamber 10. A probe PL for detecting a potential of the plasma is attached to the chamber 10 so as to be separated from the electrostatic chuck. The probe PL includes: a rod-shaped conductive member CP; and a cylindrical dielectric member DP covering the conductive member CP. With such the probe PL, a small change in a state of the plasma generated inside the chamber 10 can be detected.SELECTED DRAWING: Figure 2

Inventors:
FUJII KAZUYUKI
INOUE YOSUKE
Application Number:
JP2019092614A
Publication Date:
November 19, 2020
Filing Date:
May 16, 2019
Export Citation:
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Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H05H1/00; C23C16/52; H01L21/205; H01L21/3065; H01L21/31; H05H1/46
Domestic Patent References:
JP2013187156A2013-09-19
JP2005203124A2005-07-28
JP2000299173A2000-10-24
Attorney, Agent or Firm:
Tsutsui International Patent Office