To provide a capacity-coupled plasma processing device that performs plasma processing with high in-plane uniformity and hardly causes the charge-up damage.
The capacity-coupled plasma processing device 100 has a chamber 1 held in a vacuum atmosphere, first and second electrodes 2 and 18 arranged in parallel with each other in the chamber 1, and a plasma generating mechanism 10 which generates the plasma of a processing gas by forming a high-frequency electric field between the electrodes 2 and 18. In the device 100, the first electrode 2 supports a wafer W and, at the same time, functions as a cathode electrode to which high-frequency electric power is applied, the second electrode 18 functions as a grounded anode electrode, and the surface of the electrode 18 facing the first electrode 2 is composed of a conductive material 18c.
HIGUCHI KIMIHIRO
MATSUDO TATSUO
IIJIMA ETSUO
ITO HIROHARU
MATSUYAMA SHOICHIRO
IMAI NORIAKI
NAGASEKI KAZUYA
