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Title:
PLASMA PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP3685461
Kind Code:
B2
Abstract:

PURPOSE: To make a device compact and simplified, and enable control of plasma generation conditions by forming a part of a vacuum chamber of a cylinder of insulation material, and applying high frequency to a plasma generating coil around it by a high frequency power source.
CONSTITUTION: A vacuum chamber 31 is evacuated by an air discharge pump 26, and reaction gas is introduced by a gas introducing tube 24. High frequency power is applied to a first and a second coil 32, 33 by a first and a second high frequency power sources 35, 37 through a first and a second matching devices 34, 36 respectively. The reaction gas is dissociated by action of an electric field and a magnetic field formed by the coils 32, 33 to generate plasma 16 in the vacuum chamber 31. At this time, differential phase of high frequency power of outputs of the power sources, 35, 37 is regulated by a phase shifter, so agitation action is generated at the electric field and the magnetic field to control plasma generation conditions. Simultaneously, power is supplied to a flat electrode 28 from a high frequency power source 30 through a matching device 29 to generate a DC voltage at the electrode 28, or vibrate ions in the plasma 16, thereby processing conditions of a subject material 5 are controlled.


Inventors:
Toyoda and his group
Tsutomu Tanaka
Sadayuki Suzuki
Application Number:
JP30727393A
Publication Date:
August 17, 2005
Filing Date:
November 12, 1993
Export Citation:
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Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H05H1/46; C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): H05H1/46; C23F4/00; H01L21/3065
Domestic Patent References:
JP64057600A
JP63158799A
JP4167400A
Attorney, Agent or Firm:
Shoji Miyoshi