Title:
プラズマ処理装置及びプラズマ処理方法
Document Type and Number:
Japanese Patent JP7439288
Kind Code:
B2
Abstract:
In order to make it possible to perform highly precise plasma processing by efficiently carrying out removal while maintaining an amount of electric charge to be removed from a wafer surface, provided is a plasma processing device comprising a processing chamber in which a sample is subjected to plasma processing, a first high-frequency power supply which supplies a high-frequency electric power for generating plasma, a sample stage on which the sample is placed, a second high-frequency power supply which supplies high-frequency electric power to the sample stage, a power supply which supplies voltage to the sample stage, and a control device which controls the power supply, wherein one cycle of the waveform of the voltage has a rising period in which the voltage rises, a falling period in which the voltage falls, and a removal amount control period in which a removal amount of charged particles of the sample per unit time is controlled.
Inventors:
Isao Mori
Ryosuke Ochiai
Ryosuke Ochiai
Application Number:
JP2022552364A
Publication Date:
February 27, 2024
Filing Date:
August 23, 2021
Export Citation:
Assignee:
Hitachi High-Tech Co., Ltd.
International Classes:
H01L21/3065
Domestic Patent References:
| JP2020077862A | ||||
| JP2020109838A | ||||
| JP2010103465A |
Foreign References:
| WO2020100357A1 |
Attorney, Agent or Firm:
Polaire Patent Attorneys Corporation