Title:
PLASMA PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP2022105037
Kind Code:
A
Abstract:
To provide a plasma processing device which can suppress the excessive dissociation of gas in a chamber, and suppress the re-dissociation of a reaction product produced by plasma etching.SOLUTION: A plasma processing device according to an exemplary embodiment comprises: a high-frequency power source which generate a high-frequency power for generating plasma; and a biasing power source which periodically applies a pulse-like voltage of a negative polarity to a lower electrode to draw ions into a substrate-supporting unit. The high-frequency power source supplies a high-frequency power as one or more pulses in a period during which no pulse-like voltage of a negative polarity is applied to the lower electrode. Each of the one or more pulses has a power level which gradually increases from its start time to a time when a peak appears.SELECTED DRAWING: Figure 1
Inventors:
KUBOTA SHINJI
Application Number:
JP2022066927A
Publication Date:
July 12, 2022
Filing Date:
April 14, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H05H1/46; H01L21/3065
Domestic Patent References:
| JP2013535074A | 2013-09-09 | |||
| JP2017204467A | 2017-11-16 | |||
| JP2016051542A | 2016-04-11 | |||
| JP2001358129A | 2001-12-26 |
Foreign References:
| US20180209035A1 | 2018-07-26 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Yoshiki Kuroki
Junji Kashiwaoka
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