Title:
PLASMA PROCESSOR, PROCESS MONITORING METHOD AND FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3630931
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To monitor fluctuation and aging of plasma processing characteristics in real time by substituting electrical signals measured in real time into a model equation, thereby estimating the plasma state.
SOLUTION: A model equation for estimating plasma processing characteristics from controller parameters obtained through analysis of trial test data is stored in a model equation memory means 48. An operating means 44 substitutes measurements of electrical signal sampled through an electrical signal sampling means 42 into the model equation stored in the model equation memory means 48. The operating means 44 predicts the values of etching characteristics, e.g. etching rate and uniformity of etching, and calculates the actual values thereof based on end point information detected by an end point detecting means 46.
Inventors:
Masato Kosugi
Application Number:
JP22946997A
Publication Date:
March 23, 2005
Filing Date:
August 26, 1997
Export Citation:
Assignee:
富士通株式会社
International Classes:
H05H1/46; C23C16/50; C23F4/00; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; C23C16/50; C23F4/00; H01L21/205; H05H1/46
Domestic Patent References:
| JP6132251A | ||||
| JP9115883A | ||||
| JP9022900A | ||||
| JP9162175A | ||||
| JP5253797A | ||||
| JP8064393A |
Attorney, Agent or Firm:
Yoshito Kitano