PLASMA TREATING APPARATUS - TOKYO ELECTRON LTD

Title:

PLASMA TREATING APPARATUS

Document Type and Number:

Japanese Patent JP2000286235

Kind Code:

A

Abstract:

To provide a plasma treating apparatus in which abnormal discharges are made difficult to be generated by the return currents of high frequency currents.

This plasma treating apparatus is constituted of a chamber 1 whose inside part can be held in a vacuum state, and a lower electrode 2 supporting a substrate W to which high frequencies are impressed, an upper electrode 16 provided so as to be faced to the lower electrode, a high-frequency power source 11 for forming plasma of a treatment gas between the upper electrode and the lower electrode, a power feeding member 8 for feeding power from the high-frequency power source 11 to the lower electrode 2, and an impedance adjusting means 30 for adjusting the impedance of a return current circuit returning from the plasma, at least through the inner wall of the chamber 1 to the high-frequency power source.

Inventors:

KUBOTA KAZUHIRO
KAWABATA JUNJI
TOZAWA SHIGEKI
ISHIKAWA HIROSHI
NISHIBE HARUHITO

Application Number:

JP8774399A

Publication Date:

October 13, 2000

Filing Date:

March 30, 1999

Export Citation:

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Assignee:

TOKYO ELECTRON LTD
SEMICONDUCTOR LEADING EDGE TEC

International Classes:

H01L21/302; C23C16/50; C23C16/505; C23F4/00; H01J37/32; H01L21/205; H01L21/3065; H01L21/31; H05H1/46; (IPC1-7): H01L21/3065; C23C16/505; C23F4/00; H01L21/205; H01L21/31; H05H1/46

Attorney, Agent or Firm:

Hiroshi Takayama

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