Title:
POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP2023131086
Kind Code:
A
Abstract:
To provide means for improving a ratio of an SiOC polishing rate to an SiN polishing rate.SOLUTION: A polishing composition contains: abrasive grains including at least one kind of zirconia particles; a selectivity improver which contains at least one kind of salt comprising a monovalent anion and a monovalent or higher cation and improves a ratio of an SiOC polishing rate to an SiN polishing rate; and a pH adjuster containing at least one kind of acid. The polishing composition has a pH higher than 3.0 and lower than 7.0. The zeta potential of the abrasive grains is a positive value.SELECTED DRAWING: None
Inventors:
TADA MAKI
KUMAYAMA AKANE
KUMAYAMA AKANE
Application Number:
JP2022145042A
Publication Date:
September 21, 2023
Filing Date:
September 13, 2022
Export Citation:
Assignee:
FUJIMI INC
International Classes:
C09K3/14; B24B37/00; C09G1/02; H01L21/304
Attorney, Agent or Firm:
IBC Ichibancho Patent Attorney Corporation