Title:
POLISHING METHOD FOR SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPH0386468
Kind Code:
A
Abstract:
PURPOSE: To enable a specular polishing that the surface roughness is less than 10 by specifying the conditions of the pH of the alkali liquid of an abrasive and contained abrasive grain size, the feeding quantity, polishing pressure, etc., of the abrasive.
CONSTITUTION: An abrasive 8 containing the abrasive grain in 10 - 300 grain size in the alkali liquid of less than 11.0 pH is used and a finishing polishing is executed under the conditions of 0.01 - 0.2cc/cm2 feed quantity of the abrasive 8 and 100 - 200g/cm2 polishing pressure. Thus, the mechanical action as well as the etching action are slightly strengthened and the semiconductor board 5 surface can be polished in less than 10 surface roughness without causing a flaw and damage.
Inventors:
NIEDA AKIRA
SATO HIROSHI
SHIMANOE MUNEHARU
SATO HIROSHI
SHIMANOE MUNEHARU
Application Number:
JP22406389A
Publication Date:
April 11, 1991
Filing Date:
August 30, 1989
Export Citation:
Assignee:
SONY CORP
International Classes:
B24B37/00; B24B37/005; H01L21/304; (IPC1-7): B24B37/00; B24B37/04; H01L21/304
Attorney, Agent or Firm:
Hidekuma Matsukuma
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