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Title:
POLISHING METHOD AND GRINDING/POLISHING METHOD
Document Type and Number:
Japanese Patent JP2002283212
Kind Code:
A
Abstract:

To provide a polishing method capable of removing a processing distortion existing on a back surface of a semiconductor wafer by polishing the back surface thereof with a high polishing efficiency and a high polishing quality and a grinding/polishing including the polishing method.

The back surface of the semiconductor wafer W is ground by a grinding member and thereafter, the back surface of the semiconductor wafer W is polished by rotating the semiconductor wafer W and a polishing means 6 and pressing the polishing means 6 to the back surface of the semiconductor wafer W. The polishing means is constituted by dispersing an abrasive grain in a felt of which a density is 0.20 g/cm3 or more and a hardness is 30 or more.


Inventors:
SEKIYA MINOSUKE
KOMA YUTAKA
YAMAMOTO SETSUO
AOKI MASASHI
Application Number:
JP2001093399A
Publication Date:
October 03, 2002
Filing Date:
March 28, 2001
Export Citation:
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Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
B24B29/00; B24B37/24; B24D13/14; H01L21/304; (IPC1-7): B24B29/00; B24D13/14; H01L21/304
Domestic Patent References:
JP2000343440A2000-12-12
JPS5656382A1981-05-18
JP2000254857A2000-09-19
JPH02145957U1990-12-11
JPH10249711A1998-09-22
JPH11156711A1999-06-15
JPH09193008A1997-07-29
JPH11198007A1999-07-27
Attorney, Agent or Firm:
Naozumi Ono