To provide a CPM polishing solution with which the polished surface of high flatness is obtained even when the polished surface consists of a plurality of substances, and the generation of metallic residuals and polishing flaws after polishing are suppressed, and also to provide a method for performing chemical mechanical polishing (CMP) by using the CPM polishing solution.
In the CMP polishing solution containing a surface-active agent, an oxidized metal resolvent and water, the surface-active agent is at least one surface-active agent selected from an alkyl-trimethyl ammonium type surface-active agent, an alkyl-dimethyl benzyl ammonium type surface-active agent, an alkyl-amide amine type surface-active agent, and an alkyl-amine type surface active agent. Preferably, the content of the surface-active agent in the CMP polishing solution is 0.0001 to 0.1 mass %.
SAKURADA TAKASHI
Iwa Saki Kokuni
Akira Kurihara
Kawamata Sumio
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu