Title:
Power insulated gate field effect transistor
Document Type and Number:
Japanese Patent JP5938182
Kind Code:
B2
Inventors:
Yasuhiko Takemura
Application Number:
JP2011205447A
Publication Date:
June 22, 2016
Filing Date:
September 21, 2011
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336
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