Title:
POWER SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2017191830
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a power semiconductor element having a guard ring structure and a high breakdown voltage, in which a silicon nitride film covering the guard ring is semi-insulative, uniform in conductivity, and easy to control the conductivity.SOLUTION: A power semiconductor element comprises: a semiconductor substrate; a plurality of guard rings formed on the semiconductor substrate; a plurality of conductors connected with the plurality of guard rings respectively; and a semi-insulating silicon nitride film formed so as to cover at least one of the plurality of conductors, and having the plurality of guard rings electrically connected with the guard rings adjacent thereto. The amount of nitrogen included in the semi-insulating silicon nitride film is 40 atom% or more and less than 65 atom%.SELECTED DRAWING: Figure 2
More Like This:
| JP2006344873 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| JP2017188683 | THIN FILM TRANSISTOR |
| JP3746478 | Manufacturing method of semiconductor devices |
Inventors:
GOTO YASUSHI
SAKAMOTO HISATOSHI
IWANARI YUMI
SAKAMOTO HISATOSHI
IWANARI YUMI
Application Number:
JP2016079607A
Publication Date:
October 19, 2017
Filing Date:
April 12, 2016
Export Citation:
Assignee:
KOBE STEEL LTD
International Classes:
H01L21/336; H01L21/318; H01L29/06; H01L29/739; H01L29/78
Attorney, Agent or Firm:
Patent business corporation glory patent office
Previous Patent: A shield fabrication object and a manufacturing method for the same
Next Patent: A substrate with built-in parts
Next Patent: A substrate with built-in parts