Title:
POWER SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2012160746
Kind Code:
A
Abstract:
To improve withstand voltage using a nitride compound semiconductor layer formed in crack-free and having thickness larger than that of a conventional one with respect to a power semiconductor element such as a power diode and a power MOSFET formed by using a nitride compound semiconductor.
A power semiconductor element comprises: a carrier mobility layer 3 made of a nitride compound semiconductor selectively grown to be a protruding shape of 10 μm or more thickness on a silicon substrate 1; and an electrode 4 formed on the carrier mobility layer 3. One power semiconductor element comprises one carrier mobility layer 3.
Inventors:
SATO YOSHIHIRO
KATO SADAHIRO
IWAMI MASAYUKI
SASAKI HITOSHI
OTOMO SHINYA
KATO SADAHIRO
IWAMI MASAYUKI
SASAKI HITOSHI
OTOMO SHINYA
Application Number:
JP2012070145A
Publication Date:
August 23, 2012
Filing Date:
March 26, 2012
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD
International Classes:
H01L29/47; H01L21/205; H01L21/28; H01L21/329; H01L21/336; H01L21/337; H01L21/338; H01L29/12; H01L29/78; H01L29/808; H01L29/812; H01L29/872
Domestic Patent References:
| JP2003229566A | 2003-08-15 | |||
| JP2006005005A | 2006-01-05 | |||
| JP2006286954A | 2006-10-19 | |||
| JP2006269880A | 2006-10-05 | |||
| JP2006100801A | 2006-04-13 |
Attorney, Agent or Firm:
Ryo Matsushita
Previous Patent: 立体映像提供装置及びその方法
Next Patent: SILICON OXIDE FILM FORMATION METHOD, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Next Patent: SILICON OXIDE FILM FORMATION METHOD, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME