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Title:
パワー半導体モジュール、マスク、測定方法、コンピュータソフトウェア、及び記録媒体
Document Type and Number:
Japanese Patent JP7101878
Kind Code:
B2
Abstract:
[Power semi-conductor module (1) comprising:- at least one IGBT with a Gate G forming a first electrode (11) and an Emitter E forming a second electrode (12), or- at least one MOSFET with a Gate G forming a first electrode (11) and a Source S forming a second electrode (12).The first electrode (11) includes a polysilicon material made in one piece. The one-piece is made partly of a monitoring portion (13). The monitoring portion (13) is in electrical contact with the second electrode (12) such that a leakage current flows between the first electrode (11) and the second electrode (12) in an operational state of the module (1). The monitoring portion (13) has a location, a form, a size and a material composition selected together such that to have a variable resistance in function of its temperature during the operational state of the module (1).

Inventors:
Des Grandes, Nicolas
Application Number:
JP2021517158A
Publication Date:
July 15, 2022
Filing Date:
June 04, 2019
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC R&D CENTRE EUROPE B.V.
International Classes:
H01L29/78; G01K7/01; H01L21/336; H01L21/66; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/739
Domestic Patent References:
JP2005503022A
JP2010258233A
JP2008218611A
JP8088547A
JP2000338146A
JP10246676A
JP2004134472A
Foreign References:
US20100001785
US20160163689
US20100194635
Attorney, Agent or Firm:
Michiharu Soga
Kajinami order
Kazuhiro Oya
Shunichi Ueda
Junichiro Yoshida