PURPOSE: To improve the physical characteristics of a multilayer structure film, by introducing a subject material gas, an object material gas and externally-activated hydrogen into a reaction space and by controlling the amount of the introduced object material gas periodically.
CONSTITUTION: In a multilayer structure film composed of layers of two kinds or more, such as a multilayer film formed by superposing alternately layers to two kinds having different physical properties, the thickness of each layer is set to be 10W200. The amount of introduction of an object material gas, a component of a small flow rate, into a reaction space is set to be 1/2a or below to the amount (a) of introduction of a subject material gas, a component of a large flow rate, into the reaction space. Moreover, an active speed of hydrogen is introduced into the reaction space, and thereby the amount of the active seed is controlled. A silicon compound, such as SiF4 or SiCl4, or the like is used as the subject material gas, and a germanium compound such as GeF4 or GeF2Cl2 or carbon compound such as CF4 or C2F6CCl4 is used as the object material gas. In addition, a GeF4 gas of a prescribed flow rate is always introduced into a chamber intermittently in accordance with an electric signal.
HANNA JUNICHI
SHIMIZU ISAMU
| JPS5772317A | 1982-05-06 |