PREPARATION OF SILICON CARBIDE POWDER

Title:

PREPARATION OF SILICON CARBIDE POWDER

Document Type and Number:

Japanese Patent JPS6054910

Kind Code:

A

Abstract:

PURPOSE: To prepare uniform fine powder of SiC in a short time inexpensively, by calcining a granulated raw material consisting of SiO2, C and a binder with changing the flow direction of an inert gas.

CONSTITUTION: A granulated raw material consisting of SiO2(e.g., silica sand, white carbon, etc.), a carbon raw material (e,g., carbon black, petroleum coke, etc.), and a binder (e.g., petroleum pitch, sucrose, etc.) is put in a furnace and calcined. In the calcination, the flow direction of an inert gas is changed at a proper time interval (usually 5W60min range). Uniform fine powder of β-SiC can be prepared by a simple process in a short time inexpensively.

More Like This:

WO/2013/100456	SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR GROWING SINGLE CRYSTAL
JPS62128913	PRODUCTION OF SILICON CARBIDE POWDER

Inventors:

KURAMOTO TOORU
TSUKUDA KAZUSHI
ONO HIROSHI
NISHINO KOUZOU

Application Number:

JP16251583A

Publication Date:

March 29, 1985

Filing Date:

September 06, 1983

Export Citation:

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Assignee:

CENTRAL GLASS CO LTD

International Classes:

C01B31/36; (IPC1-7): C01B31/36

Domestic Patent References:

JPS4822920A
JPS4866100A	1973-09-11
JPS5520213A	1980-02-13
JPS5645899A	1981-04-25

Attorney, Agent or Firm:

Eiichi Sakamoto

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