To reduce temperature fluctuation components both in a primary degree and in a seconary degree caused by the sensitivity temperature characteristic of a semiconductor sensor.
This pressure sensor circuit is provided with a band gap reference circuit 20 of a linear negative temperature characteristic, a comparator 21 connected with an output terminal of the reference circuit 20 and a non- inverting input terminal, a temperature sensing resistance TR having a linear positive temperature characteristic and connected between an output terminal of the comparator 21 and its inversion input terminal, a resistance R20 connected between the inversion input terminal of the comparator 21 and the ground, and a semiconductor pressure sensor of a bridge circuit constitution connected between the output terminal of the comparator 21 and its inversion input terminal.
| JPH05256715 | SENSOR ASSEMBLY |
| JPH06229862 | PRESSURE SENSOR |
| JP3044704 | HYBRID IC AND MANUFACTURE THEREOF |
KONISHI YASUJI
FUJIMURA TOSHIO
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