To provide a process for producing a semiconductor substrate in which a strained Si layer can be formed on a silicon substrate while suppressing threading dislocation as much as possible and eliminating an SiGe layer as much as possible and production efficiency can be enhanced.
The process for producing a semiconductor substrate comprises a step for preparing a first material, where a silicon-germanium porous layer formed by anodizing a silicon-germanium substrate and a strained silicon layer are formed sequentially, on the silicon-germanium substrate, a step for preparing a second material where a silicon oxide film layer is formed on a silicon-germanium substrate, a step for pasting the strained silicon layer side of the first material and the silicon oxide film layer side of the second material, and a step for obtaining a silicon substrate where the silicon oxide film layer and the strained silicon layer are formed sequentially by separating and removing the silicon-germanium substrate and the silicon-germanium porous layer on the silicon-germanium substrate.
SENSAI KOJI
KURITA HISATSUGU
SENDA TAKESHI
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