PURPOSE: The vapor-phase deposition of silicon on the substrate which is kept at a specific temperature is effected in the deposition tank containing a hydrogen gas, as electron rays are irradiated, to produce hydrogen-containing amorphous silicon which is suitable for solar cells, because of its excellent light response.

CONSTITUTION: In the vapor-phase deposition tank 1, the base plate 3 and the silicon vapor source 3 are set oppositely each other and, as hydrogen is introduced into the tank 1, the inside is evacuated through the exhaustion duct 5 to keep its reduced pressure. Further, the negative bias voltage is applied using the direct current source 7 to the base plate 2 and simultaneously the base plate is heated with the heater 6 to keep it at 450W550°C. Electron rays are irradiated near the base 2 from the generator 8 which is set so that it directly opposes the base plate 2 and silicon is vaporized by heating the silicon source 3 with the electron ray heater 9 to produce the objective hydrogen-containing amorphous silicon.