PURPOSE: To attain production reducing the unevenness of the thickness of respective layers of a filter to form a color filter reduced at the unevenness of sensitivity by forming at least one out of a gate insulating film, an inter-layer insulating film and a protection film between solid-state image pickup devices.

CONSTITUTION: A protection film 105 is formed on the surface of a silicon wafer 104 on which photodetecting part 101aW101c, scanning circuit parts 102aW102d, a gate insulating film 112, gates 113aW113d, an inter-layer insulating film 14, and optical shielding layers 103aW103d have been a already formed. A smooth layer 106 is formed on the surface of the film 105, and after applying a transparent photosensitive agent to form optical filter layers 108a, 10b to the whole surface of the wafer 104, a peripheral outline pattern 107 is formed. Since the pattern 107 is not formed on the film 105 formed on the wafer 104, the photosensitive agent stagnated on the pattern 107 is reduced and the unevenness of the thickness of respective layers is reduced, reducing the unevenness of the sensitivity.