PURPOSE: To obtain a low resistant film at a low temperature by heat treating a specific powder, grinding the powder, molding the prepared powder and subsequently sintering the molded product.
CONSTITUTION: The power of SnO2 and the powder of In2O3 are compounded with each other to give (A) a raw material powder containing the Sn component in an amount of ≥3wt.% and having an average particle diameter of ≤0.1μm. The component A is heated at a temperature of ≥1350°C over 24hrs and subsequently ground with a ball mill, etc., to prepare a ground product (B) having an average particle diameter of ≤1μm. The component B is press-molded in a mold, etc., under a pressure of 0.5-3t/cm2 and the prepared molded product (C) is sintered at a temperature of ≥1350°C within 5hrs to provide an ITO sintered product having a In2O3 phase forming solid solution with Sn as a main constituting component, containing the Sn in an amount of ≥3wt.% and having a integrated strength of X-ray diffraction peaks on the (110) surface of the SnO2 phase in an amount of ≥0.5% based on the integrated strength of X-ray diffraction peaks on the (222) surface of the In2O3 phase.
TAKANASHI SHOJI
NATE TATSUO
