PRODUCTION METHOD OF SEMICONDUCTOR DEVICE

Title:

PRODUCTION METHOD OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS5218179

Kind Code:

A

Abstract:

PURPOSE: In order to prevent the short circuit between the drain-region baseplates and reduce the capacity between gate and drain, by means of forming the drain layer so as to make it thin at the deep position under the gate electrode and thick at the foot of the drain electrode.

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Inventors:

OOMORI MASASHI
OOKURA ISAO
SHIMOTORI KAZUHIRO
ANAMI KENJI

Application Number:

JP9433275A

Publication Date:

February 10, 1977

Filing Date:

August 01, 1975

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP

International Classes:

H01L29/78; H01L21/28; H01L21/316; H01L21/336; H01L29/40; (IPC1-7): H01L21/28; H01L29/40; H01L29/78

Domestic Patent References:

JPS509379A

1975-01-30

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