PRODUCTION METHOD FOR VAPOR-DEPOSITING MATERIAL OF SILICON MONOXIDE

Title:

PRODUCTION METHOD FOR VAPOR-DEPOSITING MATERIAL OF SILICON MONOXIDE

Document Type and Number:

Japanese Patent JP3488419

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide an effective production method for a vapor-depositing material of silicon monoxide from powder of metallic silicon and powder of silicon dioxide as raw materials by vacuum vapor-deposition method, wherein the particle distribution of both the powder and their mixing ratio are respectively controlled to constant ranges.
SOLUTION: This vapor-depositing material is produced by vacuum vapor- deposition method, using a raw material satisfying that the average particle diameter of powder of metallic silicon and powder of silicon dioxide is in the range of 1 μm-4×101 μm, or the molar ratio of the powder of metallic silicon to the powder to silicon dioxide (silicon dioxide/metallic silicon) is in the range of 0.90-0.99, or satisfying both of these two conditions.

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Inventors:

Nobuhiro Arimoto
Kazuo Nishioka
Shingo Kizaki
Tadashi Ogasawara
Makoto Fujita

Application Number:

JP2000262572A

Publication Date:

January 19, 2004

Filing Date:

August 31, 2000

Export Citation:

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Assignee:

Sumitomo Titanium Co., Ltd.

International Classes:

C01B33/113; C23C14/24; (IPC1-7): C23C14/24; C01B33/113

Domestic Patent References:

JP6183718A
JP734224A
JP5171412A
JP63103814A
JP657417A
JP4726958B1

Attorney, Agent or Firm:

Shigenobu Ikejou (1 person outside)

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