Title:
PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH03137091
Kind Code:
A
Abstract:
PURPOSE:To obtain single crystal having uniform characteristics at a high yield by calculating the difference of both the measured weight of single crystal being grown and the arithmetic weight calculated from a measured diameter and judging the shape of the interface of solid and liquid from this difference and controlling the conditions of crystal growth on the basis of this judged result in the production of semiconductor single crystal by a pulling-up method. CONSTITUTION:In the production of semiconductor single crystal wherein single crystal 2 is grown by bringing seed crystal 5 into contact with the melt 4 of a raw material for crystal in a crucible 1 and pulling up the seed crystal, the constitution described hereunder is adopted. In other words, the weight of single crystal 2 which is grown while being pulled up is measured by a weight measuring means (a weight sensor 11, a buoyancy correction circuit 14, an arithmetic circuit 18). Further the diameter of single crystal 2 is measured by a diameter measuring means (a camera 12, a detecting circuit 15 for diameter of crystal, an arithmetic circuit 18). The difference of both the measured weight of single crystal 2 which is measured by the weight measuring means and the arithmetic weight of single crystal which is calculated on the basis of the diameter measured by the diameter measuring means is obtained. The shape of the solid-liquid interface of single crystal 2 and the melt 4 of the raw material for crystal is judged from this difference. The conditions of crystal growth are controlled on the basis of this judged result so that the shape of the solid-liquid interface is made to an optimum shape.
Inventors:
SHIBATA MASATOMO
Application Number:
JP27254389A
Publication Date:
June 11, 1991
Filing Date:
October 19, 1989
Export Citation:
Assignee:
HITACHI CABLE
International Classes:
C30B15/22; H01L21/208; (IPC1-7): C30B15/22; H01L21/208
Domestic Patent References:
| JPS63195190A | 1988-08-12 | |||
| JPS6165397A | 1986-04-03 | |||
| JPS6144789A | 1986-03-04 | |||
| JPS617577A | 1986-01-14 |
Attorney, Agent or Firm:
Takashi Matsumoto
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