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Title:
PRODUCTION OF SILICON CARBIDE-BASED SINTERED COMPACT HAVING HIGH HEAT CONDUCTIVITY
Document Type and Number:
Japanese Patent JPH05213673
Kind Code:
A
Abstract:

PURPOSE: To obtain a silicon carbide-based sintered compact having high mechanical characteristics and high heat conductivity by adding a carbon-contg. compd. and a boron-contg. compd. as sintering aids and carrying out sintering and heat treatment in a nitrogen atmosphere under a high pressure.

CONSTITUTION: A carbon-contg. compd. such as carbon black and a boroncontg. compd. such as B4C as sintering aids are added to silicon carbide powder having 0.1-2μm average particle diameter as a base by 1-4wt.% (expressed in terms of carbon) and 0.2-0.4wt.% (expressed in terms of boron), respectivity. They are mixed with a mixing means such as a ball mill, a binder is added and the mixture is molded into a desired shape by press molding or other method and sintered at 1,950-2,000°C in vacuum or in an inert atmosphere to obtain a silicon carbide-based sintered compact having ≥88% relative density and low heat conductivity. This sintered compact is heat-treated at 1,800-2,100°C in a nitrogen atmosphere under a high pressure of 1,500-2,000atm so that the weight is increased by 0.01-5% and a sintered compact having ≥100 W/m×k heat conductivity is obtd.


Inventors:
NAGANO SABURO
NAKANISHI MASAHITO
Application Number:
JP1676192A
Publication Date:
August 24, 1993
Filing Date:
January 31, 1992
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
C04B35/565; C04B35/56; C04B35/64; (IPC1-7): C04B35/56; C04B35/64



 
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