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Patent Searching and Data


Title:
PRODUCTION OF SILICON NITRIDE SINTERED COMPACT
Document Type and Number:
Japanese Patent JPH08119744
Kind Code:
A
Abstract:

PURPOSE: To obtain the silicon nitride sintered compact giving an extremely smooth surface, when subjected to a mirror-abrading treatment, by embedding a sintered compact produced at the atmospheric pressure in the powder of silicon nitride, etc., and subsequently subjecting the embedded sintered compact to a hot hydrostatic pressing treatment with an inactive gas excluding nitrogen gas.

CONSTITUTION: The method for producing the silicon nitride sintered compact comprises adding a Y2O3, Al2O3, MgO, etc., as a sintering auxiliary to the powder of silicon nitride, molding the mixture, sintering the molded product in nitrogen gas at the atmospheric pressure, embedding the sintered compact in silicon nitride powder, silicon oxide powder, the mixture powder of silicon nitride with silicon oxide, or the mixture of the powder with carbon powder, and subsequently subjecting the embedded sintered compact to a hot hydrostatic pressing treatment using an inactive gas excluding the nitrogen gas, such as argon gas, as a pressing medium gas. The method for producing the sintered compact gives the material capable of being used for molds useful for molding metal rolls, industrial mirrors, etc.


Inventors:
ASAI YOSHIHIRO
NISHI YOSHIJI
SHIOGAI TATSUYA
Application Number:
JP27423294A
Publication Date:
May 14, 1996
Filing Date:
October 14, 1994
Export Citation:
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Assignee:
NIHON CEMENT
International Classes:
C04B35/584; C04B35/593; C04B35/645; (IPC1-7): C04B35/584; C04B35/593; C04B35/645