Title:
PRODUCTION OF SINGLE CRYSTAL OF COMPOUND OF GROUP III-V
Document Type and Number:
Japanese Patent JPH0412081
Kind Code:
A
Abstract:
PURPOSE:To rear a single crystal from direct synthesis of a raw material in good productivity by melting a compound of the groups III to V synthesized in a single crystal rearing furnace, melting a specific seed crystal until the upper end of a pocket part and then rearing the single crystal. CONSTITUTION:In the interior of a crucible 1, Ga 3 is melted and then B2O3 is softened. The inside of the crucible is covered by B2O3 and B2O3 enters also between a feed crystal in conical crucible bottom and crucible inner wall and Ga melt does not enter, because Ga melt 4 has good wetting property with the crucible, but B2O3 has good wetting property with the crucible. Synthetic reaction of Ga with As is carried out at about 1000 deg.C and a GaAs compound 12 is produced and in further heating, the whole becomes GaAs melt. Then the seed crystal 2 is melted until the upper end of a pocket part and rearing of crystal is started. The seed crystal 2 used can be repeatedly used when the seed crystal 2 is cut out from the single crystal reared in the crucible having same shape.
Inventors:
OKABE YOSHIHIRO
Application Number:
JP11024090A
Publication Date:
January 16, 1992
Filing Date:
April 27, 1990
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
International Classes:
C30B11/00; C30B29/40; H01L21/208; (IPC1-7): C30B11/00
Next Patent: METHOD FOR GROWING SINGLE CRYSTAL