Title:
PRODUCTION OF SUBSTRATE FOR SEMICONDUCTOR INTEGRATED CIRCUITS
Document Type and Number:
Japanese Patent JPS5330284
Kind Code:
A
Abstract:
PURPOSE:To obtain a substrate inlaid with single crystal island regions in its polycrystalline supporting layer by laminating a single crystal substrate and a supporting substrate by using a BSG or PSG film, forming isolating grooves in the semiconductor substrate, then growing a polycrystalling semiconductor supporting layer through a dielectric substance film and etching off the glass.
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Inventors:
HORIUCHI JIYUNICHIROU
Application Number:
JP10367276A
Publication Date:
March 22, 1978
Filing Date:
September 01, 1976
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/762; H01L21/76; (IPC1-7): H01L21/76