PURPOSE: To reduce the number of stages for manufacturing a thin film semiconductor device, to improve manufacturing yield and reliability, and to reduce manufacturing costs.
CONSTITUTION: An Al film is formed on a glass substrate 11 and then patterning is done, by which a data wire 12 having a data electrode 12A or a date wire 12 alone is formed. Subsequently, an ITO film, to which water is added, is formed and then patterning is done, by which a picture element electrode 13 overlapping, in part, with the data electrode 12A or the data wire 12 is formed. By this method, a thin film diode matrix composed of MIM diode can be formed without separately forming an insulating film between the data electrode 12A or the data wire 12 and the picture element electrode 13.
KAWAI SATORU
HIROTA SHIRO
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