PURPOSE: To thermally treat a film containing elements of groups 1B, 3B and 6B without using a gas consisting of group 6B simple body or compound, to produce a thin film solar cell thereby.
CONSTITUTION: An Mo film 2 is formed on a glass substrate 1. A Cu film 3 and an In film 4 are successively formed thereon by deposition, sputtering, plating, etc. An Se powder is sprinkled over the film 4 to form an Se powder layer 7. Then the sample is subjected to heat treatment in a vacuum or in an inert gas such as Ar, at 200-250°C for about 30-60 minutes, and further they are kept at 400-450°C for about 2-4 hours so as to alloy them and form them into a CuInSe2 ternary alloy film 8. Finally, a CdS film 9 and a transparent electrode film 10 are formed thereon.
SATO KENJI
TAKADA KAZUHIRO
JPH05275331A | 1993-10-22 | |||
JPH05263219A | 1993-10-12 | |||
JPH04212430A | 1992-08-04 | |||
JPH04277682A | 1992-10-02 | |||
JPH0513795A | 1993-01-22 | |||
JPH0563225A | 1993-03-12 |