To resolve a problem that, although a bidirectional pn junction diode is used as an ESD breakdown protective device connected to a signal line between a USB connector and a protected component, cost reduction and versatility of the protective device are limited since a manufacturing process is complex and complicated in a conventional structure.
In a protective device using a horizontal type bidirectional pn junction diode, a p-type semiconductor layer is laminated on a p-type semiconductor substrate. A pn-junction is formed on a surface of the p-type semiconductor layer to provide a first n+ type impurity region and a second n+ type impurity region separated from each other. The protective device has a first conductive layer contacted with the first n+ type impurity region, a first electrode contacted with the first conductive layer and electrically connected to an input terminal, a second conductive layer contacted with the second n+ type impurity region, and a second electrode contacted with the second conductive layer and electrically connected to a ground terminal.
KOBAYASHI TAKAO
Yoshitaka Okada
Naoko Shiraishi
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