Title:
タングステン層のパルス核生成堆積
Document Type and Number:
Japanese Patent JP2005533181
Kind Code:
A
Abstract:
In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.
Inventors:
Le, Singlian
Jen, Pin
Yo, john, hyun
Rye, Ken, Coun
Mack, Alfred, W.
Jackson, Robert, Elle.
Shi, Min
Jen, Pin
Yo, john, hyun
Rye, Ken, Coun
Mack, Alfred, W.
Jackson, Robert, Elle.
Shi, Min
Application Number:
JP2004521971A
Publication Date:
November 04, 2005
Filing Date:
July 14, 2003
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C16/14; C23C16/455; C30B25/02; H01L21/285; H01L21/768; C23C16/44; (IPC1-7): C23C16/14; H01L21/285; H01L21/768
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yuichi Yamada
Yuichi Yamada