Title:
QUANTUM DOT COUPLED DEVICE
Document Type and Number:
Japanese Patent JP3245907
Kind Code:
B2
Abstract:
PURPOSE: To conduct superhigh-speed information processing and to make electric fields prevent recombination of electrons and holes upon input by structuring every dot in a double-stage pileup where tunnel transition probability of first stage quantum dots is lower than that of second stage quantum dots.
CONSTITUTION: An AlGaAs substrate 3 is overlaid with an AlAs substrate 2 which incorporates a plurality of first stage quantum dots QD1, and a plurality of second stage quantum dots QD1 are formed by facing the surface of the AlGaAs substrate 3 and reflecting positions of the first stage quantum dots QD2. Every quantum dot QD1, QD2 functions as a potential well because of being made of GaAs, and its surrounding AlAs substrate 2 and AlGaAs substrate 3 function as potential barriers. AlGaAs has a forbidden band width smaller than that of AlAs, so that a potential barrier is not so high as on the AlAs substrate 2 side.
Inventors:
Ryuichi Ugajin
Kenichi Taira
Kenichi Taira
Application Number:
JP26551191A
Publication Date:
January 15, 2002
Filing Date:
September 18, 1991
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L29/06; G06G7/00; H01L21/20; H01L29/66; (IPC1-7): H01L29/66; G06G7/00; H01L21/20; H01L29/06
Domestic Patent References:
| JP581449A | ||||
| JP2273715A | ||||
| JP1244611A |
Attorney, Agent or Firm:
Akira Koike (3 others)