Title:
原料供給方法およびシリコン単結晶の製造方法
Document Type and Number:
Japanese Patent JP6809386
Kind Code:
B2
Abstract:
To provide a raw material supply method capable of suppressing breakage of a crucible and dislocation of a silicon single crystal in charging.SOLUTION: The present invention relates to a raw material supply method of charging a solid silicon raw material in a silicon melt in a crucible when manufacturing a silicon single crystal by a Czochralski method, the raw material supply method comprising a melting process of melting the charged silicon raw material by controlling, based upon the remaining amount of the silicon melt before the charging, poser of main heater surrounding the crucible and power of a bottom h eater provided below the crucible. A method of manufacturing the silicon single crystal comprises: an initial melt preparing process of preparing the silicon melt by heating the crucible filled with only the solid silicon raw material using the main heater surrounding the crucible and the bottom heater provided below the crucible; a lifting process of lifting the silicon single crystal from the silicon melt; and a recharging process of charging the solid silicon raw material using the raw material supply method.SELECTED DRAWING: Figure 2
Inventors:
Kawakami base
Application Number:
JP2017114880A
Publication Date:
January 06, 2021
Filing Date:
June 12, 2017
Export Citation:
Assignee:
Sumco inc.
International Classes:
C30B29/06; C30B15/14; C30B15/28
Domestic Patent References:
| JP11180799A | ||||
| JP2009221062A | ||||
| JP2008069055A |
Foreign References:
| WO2002068732A1 | ||||
| WO2001063023A1 |
Attorney, Agent or Firm:
Intellectual Property Office