Title:
薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程
Document Type and Number:
Japanese Patent JP5591695
Kind Code:
B2
Abstract:
An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. At least one support element supports the wafer at the time the capsule is provided and blocks only minimal surface area from contact with the film forming atmosphere. There may be a plurality of support elements, or a surface may provide such support. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. After recrystallization, the capsule is removed.
Inventors:
Sir チャス, Emanuel, M.
Saadi, James, G.
Alder トソー, Eric, tea.
Saadi, James, G.
Alder トソー, Eric, tea.
Application Number:
JP2010514829A
Publication Date:
September 17, 2014
Filing Date:
June 26, 2008
Export Citation:
Assignee:
Massachusetts Institute オブ Technology
International Classes:
H01L21/20; C01B33/02; C23C16/56; C30B11/00; C30B29/06
Attorney, Agent or Firm:
Patent business corporation Hiroe associates patent firm
Previous Patent: ワイヤレス通信デバイス間のグループ通信においてメディアを共有するた...
Next Patent: ALUMINUM SUPPORTER FOR PRINTING PLATE
Next Patent: ALUMINUM SUPPORTER FOR PRINTING PLATE