PURPOSE: To provide a plasma enhanced reaction apparatus which uses high-frequency AC energy by constituting an electrode as part of an integrated coaxial transmission line structural body which directly connects AC energy to a chamber and forms plasma therein.
CONSTITUTION: The plasma processing reaction apparatus 10 is formed of the chamber 33 and the electrode 32C. The electrode 32C is constituted as part of the integrated coaxial transmission line structural body 32 which directly connects the AC energy of the selected frequency to the chamber 32 and forms the plasma therein. The integrated coaxial transmission line structural body 32 is opened by a central conductor 32C, insulator 32I and outer conductor 320 which are wafer supporting electrodes. As a result, the vapor deposition and energy velocity commercially executable for various kinds of the conductors, insulators and semiconductor blanks may be provided.
KUREIGU EI ROODERITSUKU
CHIYAN RON YAN
DEIBUITSUDO ENU KEI WAN
DAN MEIDAN
JPH01122600A | 1989-05-15 |