REACTION CHAMBER GAS FLOWING METHOD AND SHOWER HEAD USED THEREFOR

Title:

REACTION CHAMBER GAS FLOWING METHOD AND SHOWER HEAD USED THEREFOR

Document Type and Number:

Japanese Patent JP2000212752

Kind Code:

A

Abstract:

To provide a reaction chamber gas flowing method simultaneously solving the problems of the increase of contaminated particles and the drop of a vapor deposition rate and to provide a shower head used therefor.

So as to prevent the mutual mixing of 1st reaction gas B and the remaining gas A, via individual gas inlet ports, respectively, the 1st reaction gas B is flowed in toward the edge parts of a substrate 110, and the remaining gas A is flowed in toward the center part of the substrate 110. Moreover, so as to prevent the mutual mixing of the 1st reaction gas B and the remaining gas A in a shower head, passages are individually provided, the emmision ports 140 of the 1st reaction gas is formed on the edge parts of the bottom face of the shower head, and the emission port 130 of the remaining gas A is formed on the center part thereof. In this way, the formation of contaminated particles at the inside of the shower head and the reaction chamber 100 is suppressed, and the vapor deposition rate is increased.

Inventors:

CHAE YUN-SOOK
ZEN RINSHO
KANG SANG-BOM
RI SOIN
RYU KEIKAN

Application Number:

JP2000008699A

Publication Date:

August 02, 2000

Filing Date:

January 18, 2000

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

H01L21/31; C23C16/00; C23C16/455; C30B25/14; H01L21/203; C23C16/44; (IPC1-7): C23C16/455; H01L21/31

Domestic Patent References:

JPH11172438A	1999-06-29
JPS615515A	1986-01-11
JPH0977593A	1997-03-25
JPH01223724A	1989-09-06
JPH10321613A	1998-12-04
JPH05102189A	1993-04-23

Foreign References:

WO1999000532A1

1999-01-07

Attorney, Agent or Firm:

Hagiwara Makoto

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