Title:
再構成可能なＦＩＮＦＥＴベースの人工ニューロン及びシナプスデバイス
Document Type and Number:
Japanese Patent JP7483858
Kind Code:
B2
Abstract:
A semiconductor device that implements artificial neurons and synapses together on the semiconductor device includes a plurality of fins formed on the semiconductor device, and a plurality of gates formed around the plurality of fins to form a plurality of fin field-effect transistors (FinFETs). The plurality of FinFETs may form one or more artificial synapses and one or more artificial neurons. Each of the one or more artificial synapses may include two or more of the plurality of gates. Each of the one or more artificial neurons comprises one of the plurality of gates.
Inventors:
Pesic, Milan
Application Number:
JP2022506366A
Publication Date:
May 15, 2024
Filing Date:
July 28, 2020
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H10B51/30; G06G7/60; G06N3/063; H01L21/8234; H01L27/088; H10B51/40
Domestic Patent References:
| JP2015072610A | ||||
| JP2001230326A | ||||
| JP2007266209A |
Foreign References:
| WO2019066959A1 | ||||
| US20140199849 | ||||
| US20130141963 | ||||
| US20150100532 | ||||
| US20010015450 | ||||
| US20070247906 |
Attorney, Agent or Firm:
Sonoda & Kobayashi Patent Attorneys Corporation