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Patent Searching and Data


Title:
REFINING METHOD FOR SCRAP SILICON USING ELECTRON BEAM
Document Type and Number:
Japanese Patent JP2005343781
Kind Code:
A
Abstract:

To provide a refining method for scrap silicon using an electron beam, which is suitable for recycling the scrap silicon generated accompanied by the production of silicon products such as silicon wafers.

The refining method includes a process for selectively preparing N-type scrap silicon lumps containing only specified impurity elements, a process for crushing the prepared scrap silicon lumps, a process for placing the crushed silicon in a vacuum vessel, a process for melting the crushed silicon placed in the vacuum vessel by irradiating it with an electron beam, so as to evaporate the impurity elements, and a process for solidifying the obtained molten silicon.


Inventors:
YAMAUCHI NORICHIKA
SHIMADA KATSUHIKO
Application Number:
JP2004194724A
Publication Date:
December 15, 2005
Filing Date:
June 03, 2004
Export Citation:
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Assignee:
IIS MATERIALS KK
International Classes:
C01B33/037; (IPC1-7): C01B33/037
Domestic Patent References:
JPH07315827A1995-12-05
JPH10182132A1998-07-07
JPH11116229A1999-04-27
JPH10182134A1998-07-07
JPH01219011A1989-09-01
JP2004140120A2004-05-13