PURPOSE: To perform stable single longitudinal oscillation and to vary the oscillating wavelength, by varying a voltage which is applied across a pair of electrodes on a reflecting film comprising a material having electrooptical effect, which is arranged on one surface constituting a resonator for the semiconductor laser.
CONSTITUTION: On the semiconductor laser, e.g. n-GaAs single crystal substrate 1 of a double heterostructured laser diode, an n-Ga1-xAlxAs layer 2, a p-GaAs layer 3, a P-Ga1-xAlxAs layer 4, and a p-GaAs layer 5 are grown by using a liquid phase epitaxial technology. The reflecting film 10 made of a material having large electrooptical constant such as BaTiO3 is formed on an end surface 8 by sputtering, and a pair of electrodes 11 are provided on the reflecting film 10. By varying the voltage across said electrodes 11, the oscillating wavelength of the semiconductor laser can be varied. The reflecting type variable wavelength semiconductor laser obtained in this way can be effectively applied to wavelength multiplexed communications.
MORI KAZUHIKO
MATANO MASAHARU
YAMASHITA MAKI
