Title:
REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK
Document Type and Number:
Japanese Patent JP2022185356
Kind Code:
A
Abstract:
To provide a reflective photomask blank and a reflective photomask that suppress or reduce a projection effect of a reflective photomask for pattern transfer with a light of a wavelength of an extreme ultraviolet region as a light source and have hydrogen radical resistance.SOLUTION: A reflective photomask blank 10 includes a substrate 1, a reflective portion 5, and a low reflective portion 4 in this order, the low reflective portion 4 includes a multilayer reflective film 2 and a capping layer 3, the low reflective portion 4 contains a high extinction coefficient material, Ta and at least one of a material group consisting of Ti, Nb, W, and Mo, and contains more than 50 at % of the high extinction coefficient material, a content of at least one of the material group consisting of Ti, Nb, W, and Mo in the low reflective portion 4 is equal to or lower than the content of Ta, a total film thickness of the low-reflection portion 4 is 45 nm or less, and an OD value of the low reflective portion 4 is 1.0 or more.SELECTED DRAWING: Figure 1
Inventors:
YAMAGATA YUTO
GODA AYUMI
NAKANO HIDEAKI
ICHIKAWA KENJIRO
MIYAWAKI DAISUKE
GODA AYUMI
NAKANO HIDEAKI
ICHIKAWA KENJIRO
MIYAWAKI DAISUKE
Application Number:
JP2021092981A
Publication Date:
December 14, 2022
Filing Date:
June 02, 2021
Export Citation:
Assignee:
TOPPAN PHOTOMASK CO LTD
International Classes:
G03F1/24; C23C14/04; G03F1/54
Attorney, Agent or Firm:
Hirose Hajime
Miyasaka Tohru
Miyasaka Tohru