RESIST REMOVING AGENT COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

RESIST REMOVING AGENT COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2004133384

Kind Code:

A

Abstract:

To provide a resist removing agent composition having such components that photoresist residues or polymers after dry etching are easily removed and an insulating film with a low dielectric constant is not corroded or oxidized.

One example of the resist removing agent composition comprises: 5.0 wt.% of sulfamic acid; 34.7 wt.% of H2O; 0.3 wt.% of ammonium hydrogendifluoride; 30 wt.% of N, N dimethyl acetoamide; and 30 wt.% of ethyleneglycol mono n-butylether. Another example of the resist removing agent composition comprises: 3.0 wt.% of 1-hydroxyethylydene-1,1-diphosphonic acid; 0.12 wt.% of ammonium fluoride; 48.4 wt.% of H2O; and 48.5 wt.% of diethyleneglycol mono n-butylether. The resist removing agent composition is primarily used as a chemical cleaning liquid to remove the resist residue and byproduct polymers after the ashing process of a resist mask.

More Like This:

WO/2018/061065	RESIST REMOVAL LIQUID
WO/2009/004988	SYSTEM FOR CONTINUOUSLY USING RESIST STRIPPER LIQUID BASED ON NANOFILTRATION

Inventors:

MURAMATSU MASAFUMI
IWAMOTO ISATO
ASADA KAZUMI
SUZUKI TOMOKO
HIRAGA TOSHITAKA
AOYAMA TETSUO

Application Number:

JP2003159192A

Publication Date:

April 30, 2004

Filing Date:

June 04, 2003

Export Citation:

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Assignee:

SONY CORP
EKC TECHNOLOGY KK

International Classes:

G03F7/42; H01L21/02; H01L21/027; H01L21/304; H01L21/311; H01L21/3213; H01L21/768; (IPC1-7): G03F7/42; H01L21/027; H01L21/304; H01L21/768

Domestic Patent References:

JPH07244386A	1995-09-19
JP2002236375A	2002-08-23
JP2004094203A	2004-03-25
JP2001077192A	2001-03-23
JPH01105538A	1989-04-24
JPS5213776A	1977-02-02
JP2001100414A	2001-04-13
JP2007154205A	2007-06-21
JP2000507304A	2000-06-13
JPH08185799A	1996-07-16

Other References:

前田和夫, ビギナーズブックス１７はじめての半導体プロセス, JPN6008021874, 20 December 2000 (2000-12-20), JP, pages 249 - 255, ISSN: 0001038359
大木道則，大沢利昭，田中元治，千原秀昭, 化学大辞典, JPN6008057568, 20 October 1989 (1989-10-20), JP, pages 891 - 892, ISSN: 0001180484

Attorney, Agent or Firm:

Yoshimi Hatanaka

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