To provide a resistive memory device that can increase current density via a diode and improve rectification characteristics more than conventional technique and then further can increase degree of integration of the element by forming a vertical selection diode using a nanotube or nanowire; and a method of fabricating the same.

The resistive memory device includes a first conductive line 11 on a substrate, the vertical selection diode 12 comprising a nanowire or a nanotube and being arranged over the first conductive line 11, a resistive element 13 including a resistive layer 13B arranged over the vertical selection diode 12; and a second conductive line 14 arranged over the resistive element 13.